Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

Author:

Yuan HaoORCID,Wang ChengsenORCID,Tang XiaoyanORCID,Song QingwenORCID,He YanjingORCID,Zhang YimenORCID,Zhang YumingORCID,Xiao LiORCID,Wang LiangyongORCID,Wu YongORCID

Funder

National Natural Science Foundation of China

Key Research and Development Program of Shaanxi

Shaanxi Science & Technology Nova Program

Innovation platform construction project of 2018 Wuhu Science and Technology Plan

Wuhu and Xidian University special fund for industry-university-research cooperation

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design and analysis of novel high-performance thick epitaxial SiC radiation detector with low operating voltage by multiple p-type buried layers;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-01

2. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. GaN JBS Diode Device Performance Prediction Method Based on Neural Network;Micromachines;2023-01-12

4. Demonstration of Picosecond 4H-SiC Diode Avalanche Shaper With Voltage Rise Rate of 11.14 kV/ns and Peak Power Density of 62 MW/cm$^2$;IEEE Transactions on Power Electronics;2022-04

5. An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers;Journal of Central South University;2021-12

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