Affiliation:
1. CNR-IMM Sezione di Bologna
2. Ion Beam Services
3. NOVASiC
Abstract
The results of the first experiments for achieving the thermal equilibrium during 1300 °C annealing of 1×1020 cm-3 ion implanted Al+ in 3C-SiC are shown. X-ray diffraction, through reciprocal space maps and 2Θ scans, characterizes the 3C-SiC lattice recovery. The achievement of a ohmic behavior of Ni/Al/Ti alloy indicates the onset of a measurable electrical activation of the Al implanted layer. The Al electrical activation is qualified through the implanted layer sheet resistance.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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