Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si

Author:

Torregrosa F.ORCID,Canino M.,Li F.,Tamarri F.,Roux B.,Morata S.,La Via F.,Zielinski M.,Nipoti R.ORCID

Funder

HORIZON EUROPE Innovative Europe

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. W. Peter et al., Status of 3C-SiC growth and device technology, in Wide bandgap semiconductors for power electronics: materials, devices, applications. (Wiley, Hoboken, 2021), pp.97–127

2. M. Bakowski et al., Development of 3C-SiC MOSFETs. J Telecommun Inf Technol 2, 49–56 (2007)

3. CHALLENGE project—3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices—has received funding from the EU's H2020 framework programme for research and innovation under grant agreement n. 720827 from 1/1/2017 to 31/12/2020. http://www.h2020challenge.eu/

4. R. Nipoti et al., 1300°C annealing of 1×1020 Al+ ion implanted 3C-SiC. Mater. Sci. Forum 963, 420–423 (2018)

5. R. Nipoti et al., 1300°C annealing of 1 × 1020 cm−3 Al+ ion implanted 3C-SiC/Si. ECS J. Solid-State Sci. Technol. 8(9), 480–487 (2019)

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