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3. CHALLENGE project—3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices—has received funding from the EU's H2020 framework programme for research and innovation under grant agreement n. 720827 from 1/1/2017 to 31/12/2020. http://www.h2020challenge.eu/
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