4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap-Reference-Cited by-同舟云学术

4H‐SiC surface morphology after Al ion implantation and annealing with C‐cap

Published:2020-06-19 Issue:3 Volume:280 Page:229-240
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

CANINO MARICA¹^ORCID,FEDELI PAOLO¹^ORCID,ALBONETTI CRISTIANO²^ORCID,NIPOTI ROBERTA¹^ORCID

Affiliation:

1. Institute for Microelectronics and Microsystems IMM Bologna Unit National Research Council of Italy (CNR) Via Piero Gobetti 101 Bologna 40129 Italy

2. Institute for the Study on Nanostructured Materials ISMN National Research Council of Italy (CNR) Via Piero Gobetti 101 Bologna 40129 Italy

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1111/jmi.12933

Reference27 articles.

1. Surface roughening in ion implanted 4H-silicon carbide

2. The intrinsic atomic-level surface roughness mobility limit of 4H-SiC

3. Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces

4. Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC

5. Gwyddion.http://gwyddion.net/ accessed on February 21 2020

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3. Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC;Journal of Applied Physics;2024-05-08

4. Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC;Applied Surface Science;2023-03

5. Study of Ni/Al/Au ohmic contacts to p-Type 4H-SiC applied in 600 ℃ environment;Journal of Crystal Growth;2022-08