Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness-Reference-Cited by-同舟云学术

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness

Published:2019-07 Issue: Volume:963 Page:801-804
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bolotnikov Alexander¹,Losee Peter A.¹,Ghandi Reza²,Halverson Adam²,Stevanovic Ljubisa²

Affiliation:

1. General Electric Global Research Center

2. GE Global Research

Abstract

This work focuses on the ruggedness aspect of SiC MOSFET technology discussing design advances to maximize SiC device benefits for industrial and transportation power conversion applications. These improvements were studied as a tradeoff between short circuit withstand time (τsc) and device on-state resistance (RDS(on)) at operating temperature (150°C) utilizing 1.7kV MOSFETs fabricated on 2.25x4.5mm2 die. Up to two times improvement in τsc with only 20% of RDS(on) increase was achieved for design with reduced source region doping.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.963.801.pdf

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