Affiliation:
1. Anhui University of Technology
Abstract
Ruthenium (Ru) and ruthernium alloys may be utilized as new copper barrier materials in copper interconnects of ultra-large scale integration (ULSI), and chemical mechanical polish (CMP) can be applied in planarization for ULSI production. In this paper, CMP experiments were done on high purity Ru by using home-made slurry, the effect of oxidizer, complexing agent, polishing downforce, pH value, inhibitor species and inhibitor concentration on the material removal rate (MRR) was investigated. The results revealed that MRR can reach 8.7 nm/min under the following conditions: the main constituents in slurry were 1 wt.% SiO2, 1 wt.% (NH4)2S2O8, 1 wt.% tartaric acid and 3 mM imidazole, the pH value was 8.0, the down force was 2.5 psi (17.24 kPa); the roughness Ra was 7.6 nm under these conditions.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference19 articles.
1. C. J. Chang and C. M. Chieh: Thin Solid Films Vol. 335 (1998), p.146.
2. W. L. Yang, W. F. Wu, D. G. Liu and et al.: Solid-State Electron Vol. 45 (2001), p.149.
3. Q. Xie, X. P. Qu, J. J. Tan and et al.: Applied Surface Science Vol. 253(2006), p.1666.
4. J. P. Jacquemin, E. Labonne, C. Yalicheff and et al.: Microelectronic Engineering Vol. 82(2005), p.613.
5. C.C. Yang, T. Spooner, S. Ponoth and et al.: Proc. Int. Interconnect Tech. Conf. (2006), p.187.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献