Study on the Growth of Crystalline Er2O3 Films on Si Substrates by RHEED Patterns

Abstract

Er2O3 films with good crystallinity have been achieved on an oxidized Si (111) surface by molecule beam epitaxy. The initial growth of Er2O3 films epitaxially grown on Si surfaces is investigated by in situ reflection high energy electron diffraction. An interface layer was formed at the very beginning of the growth of Er2O3 film on Si, which is supposed to be attributed to the Er atom catalytic oxidation effect. The results obtained indicate that with the film growth process continued, oxygen deficient Er oxide captures oxygen from the interface layer which is formed inevitably at the initial growth of Er2O3 film and thus reduce and even remove the interface layer if the condition of O2 pressure is insufficient at a high substrate temperature such as 700°C in our case.