Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology-Reference-Cited by-同舟云学术

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Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology

Published:2004-06 Issue: Volume:457-460 Page:981-984
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Treu Michael¹,Rupp Roland²,Brunner Helmut¹,Dahlquist Fanny¹,Hecht Christian³

Affiliation:

1. Infineon Technologies Austria AG

2. Infineon Technologies AG

3. SiCED Electronics Development

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.981.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth;Journal of Crystal Growth;2023-09

2. Characterizations on the doping of single-crystal silicon carbide;Materials Today Physics;2022-12

3. 4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth;Journal of Crystal Growth;2016-08

4. 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate;Materials Science Forum;2007-09

5. Thick Epilayer for Power Devices;Materials Science Forum;2007-09

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