High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment-Reference-Cited by-同舟云学术

High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment

Published:2004-06 Issue: Volume:457-460 Page:29-34
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nishizawa Shin Ichi¹,Kato Tomohisa¹,Kitou Yasuo²,Oyanagi Naoki³,Hirose Fusao⁴,Yamaguchi Hirotaka⁵,Bahng Wook⁶,Arai Kazuo¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. R&D Association for Future Electron Devices FED

3. UPR Ultra-Low-Loss Power Device Technology Research Body

4. R&D Partnership for Future Power Electronics Technology

5. National Institute of Advanced Industrial Science and Technology AIST

6. Korea Electrotechnology Research Institute (KERI)

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.29.pdf

Reference18 articles.

1. Yu. M. Tairov and V.F. Tsvetkov: J. Crystal Growth Vol. 43 (1978), p.209.

2. S. Nishizawa, Y. Kitou, W. Bahng, N. Oyanagi, M.N. Khan and K. Arai : Mat. Sci. Forum, Vol. 353-356 (2000), p.99.

3. S. Nishizawa, H. Yamaguchi, T. Kato, M.N. Khan, K. Arai, N. Oyanagi, Y. Kitou and W. Bhang; Mater. Res. Soc. Symp. Proc. Vol. 640(2001), p. H1. 5. 1.

4. S. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi and K. Arai: Mat. Sci. Forum Vol. 389-393(2002), p.43.

5. S. Nishizawa, Y. Michikawa, T. Kato, F. Hirose, N. Oyanagi and K. Arai: Mat. Sci. Forum Vol. 433-436 (2003), p.13.

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