Shape of SiC Bulk Single Crystal Grown by Sublimation-Reference-Cited by-同舟云学术

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Shape of SiC Bulk Single Crystal Grown by Sublimation

Published:2000-05 Issue: Volume:338-342 Page:99-102
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nishizawa Shin Ichi¹,Kitou Yasuo²,Bahng Wook³,Oyanagi Naoki⁴,Khan Muhammad Nasir⁵,Arai Kazuo¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. R&D Association for Future Electron Devices FED

3. Korea Electrotechnology Research Institute (KERI)

4. UPR Ultra-Low-Loss Power Device Technology Research Body

5. Electrotechnical Laboratory

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.99.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and Characterization of Silicon Carbide Crystals;Springer Handbook of Crystal Growth;2010

2. High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment;Materials Science Forum;2004-06

3. Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation;Silicon Carbide;2004

4. Crystal Growth of Silicon Carbide: Evaluation and Modeling;SiC Power Materials;2004

5. Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization;Applied Surface Science;2003-05

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