Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization-Reference-Cited by-同舟云学术

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Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Published:2003-05 Issue: Volume:212-213 Page:177-183
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Pons M,Baillet F,Blanquet E,Pernot E,Madar R,Chaussende D,Mermoux M,Di Coccio L,Ferret P,Feuillet G,Faure C,Billon Th

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. Opportunities and Technical Strategies for Silicon Carbide Device Development

2. Advances in SiC Materials and Technology for Schottky Diode Applications

3. High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

4. Silicon Carbide Technology in New Era

5. Characterisation and Defects in Silicon Carbide

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical modeling and experimental verification of modified-PVT crystal growth of SiC;Journal of Crystal Growth;2007-05

2. Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes;Materials Science Forum;2005-05

3. In situObservation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method;Japanese Journal of Applied Physics;2004-08-10

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