Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method-Reference-Cited by-同舟云学术

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Stress Analysis of SiC Bulk Single Crystal Growth by Sublimation Method

Published:2003-09 Issue: Volume:433-436 Page:13-16
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nishizawa Shin Ichi¹,Michikawa Yumi²,Kato Tomohisa¹,Hirose Fusao³,Oyanagi Naoki⁴,Arai Kazuo¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. National Institute of Advanced Industrial Science and Technology AIST

3. R&D Partnership for Future Power Electronics Technology

4. UPR Ultra-Low-Loss Power Device Technology Research Body

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.13.pdf

Reference10 articles.

1. S. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi and K. Arai: Mater. Sci. Forum Vol. 389-393 (2002), p.43.

2. Y. Kitou, W. Bahng, T. Kato, S. Nishizawa and K. Arai: Mater. Sci. Forum Vol. 389-393 (2002), p.83.

3. A.S. Bakin, S.I. Dorozhkin, A.O. Lebedev, B.A. Kirillov, A.A. Ivanov and Yu.M. Tairov: J. Crystal Growth, Vol. 198/199 (1999), p.1015.

4. St.G. Muller, R.C. Glass, H.M. Hobgood, V.F. Tsvetkov, M. Brady, D. Henshall, J.R. Jenny, D. Malta and C.H. Carter Jr.: J. Crystal Growth Vol. 211 (2000), p.325.

5. I.A. Zhmakin, A.V. Kulik, S. Yu. Karpov, S.E. Demina, M.S. Ramm and Yu.N. Makarov, Diamond and Related Mater.: Vol. 9 (2000), p.446.

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