Numerical simulation of a new SiC growth system by the dual-directional sublimation method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. General principles of growing large-size single crystals of various silicon carbide polytypes
3. Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals
4. Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals
5. On the sublimation growth of SiC bulk crystals: development of a numerical process model
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1. Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC;Crystal Research and Technology;2024-05-30
2. Effect of crucible thermal conductivity on dislocation distribution in crystals in a silicon carbide physical vapor transport furnace;Journal of Crystal Growth;2023-02
3. Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils;Applied Sciences;2018-05-02
4. A niching genetic algorithm applied to optimize a SiC-bulk crystal growth system;Journal of Crystal Growth;2017-06
5. Application of a niching genetic algorithm to the optimization of a SiC crystal growth system;Journal of Materials Science: Materials in Electronics;2016-08-31
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