Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes-Reference-Cited by-同舟云学术

Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

Published:2003-09 Issue: Volume:433-436 Page:455-458
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Scaltrito Luciano¹,Porro Samuele¹,Giorgis Fabrizio¹,Mandracci P.¹,Cocuzza M.¹,Pirri C. Fabrizio¹,Ricciardi C.¹,Ferrero Sergio¹,Richieri G.²,Sgorlon C.²,Merlin Luigi²,Cavallini Anna³,Castaldini Antonio³

Affiliation:

1. Politecnico di Torino

2. IRCI-International Rectifier Corporation Italia

3. Università di Bologna

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.455.pdf

Reference8 articles.

1. P. Mandracci, S. Ferrero, C. Ricciardi, L. Scaltrito, G. Richieri, and C. Sgorlon, Thin Solid Films, submitted (2002).

2. M. Sasaki, Y. Nishino, S. Nakashima and H. Harima; Mater. Sci. Forum Vol. 264-268 (1998), pp.41-44.

3. W. Zhou, P. Pirouz and J.A. Powell; Mater. Sci. Forum Vol. 264-268 (1998), pp.417-420.

4. S. Nakashima and H. Harina, Phys. Stat. Sol. (a) Vol. 162 (1997), pp.39-63.

5. S. Ferrero, S. Porro, F. Giorgis, C. F. Pirri, P. Mandracci, C. Ricciardi, L. Scaltrito,C. Sgorlon, G. Richieri and L. Merlin , Journal of Physics: Condensed Matter, submitted (2002).

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process;Materials Science Forum;2019-07

2. Effect of defects on electrical properties of 4H-SiC Schottky diodes;Materials Science and Engineering: C;2008-07

3. Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes;Semiconductor Science and Technology;2007-11-07

4. Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states;Journal of Applied Physics;2007-06

5. Design, Fabrication and Characterization of 1.5 mΩcm₂, 800 V 4H-SiC n-Type Schottky Barrier Diodes;Materials Science Forum;2005-05