Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
Author:
Affiliation:
1. Istituto per la Microelettronica e Microsistemi IMM-CNR
2. Consiglio Nazionale delle Ricerche (CNR)
3. Epitaxial Technology Center
4. ST-Microelectronics
5. INFM, Università di Catania
6. Università di Catania
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.457-460.861.pdf
Reference12 articles.
1. J.N. Su and A.J. Steckl, Inst. Phys. Conf. Ser. Vol. 142 (1996) p.697.
2. L.M. Porter, R.F. Davis: Material Science and Engineering B Vol. 34 (1995) p.83.
3. .
4. F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, G.G. Condorelli, Appl. Phys. A, Vol 77 (2003), p.827.
5. F. La Via, F. Roccaforte, A. Makhatari, V. Raineri, P. Musumeci and L. Calcagno, Micoelectronic Engineering, Vol. 60 (2002), p.269.
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