Affiliation:
1. CNR-IMM, sezione di Catania, Stradale Primosole 50, I-95121, Catania, Italy
Abstract
In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10-5-10-6 Ω cm 2) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni -based and Al/Ti -based contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n- and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials
Cited by
71 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献