Affiliation:
1. Rensselaer Polytechnic Institute
2. Cree, Inc.
Abstract
The paper presents a study of the different aspects of the temperature dependent
performance of a 4H-SiC epi-emitter Bipolar Junction Transistor particularly the low temperature performance. Some critical device physics related factors that affect the forward active performance of the device are explored and the device behavior is modeled up to 100K. We present for the first time the experimental low-temperature (down to 100K) performance of 4H-SiC epi-emitter BJTs and the determination of the temperature beyond which the current gain starts to increase with temperature. We have also corroborated these results with 2-dimensional device simulations.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
10 articles.
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