Funder
Swedish Foundation for Strategic Research through the HOTSiC Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
10 articles.
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1. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18
2. Methods of Fast Analysis of DC–DC Converters—A Review;Electronics;2021-11-25
3. Electrothermal Model of SiC Power BJT;Energies;2020-05-21
4. Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments;Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits;2019-10-25
5. Numerical Simulation Model Development and Comparative Analysis of Low-voltage SiC BJT for Compact Modeling;2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2019-10