ECL-Based SiC Logic Circuits for Extreme Temperatures

Author:

Lanni Luigia1,Malm Bengt Gunnar1,Östling Mikael1,Zetterling Carl Mikael1

Affiliation:

1. KTH Royal Institute of Technology

Abstract

Integrated digital circuits, fabricated in a bipolar SiC technology, have been successfully tested up to 600 °C. Operated with-15 V supply voltage from 27 up to 600 °C OR-NOR gates exhibit stable noise margins of about 1 or 1.5 V depending on the gate design, and increasing delay-power consumption product in the range 100 - 200 nJ. In the same temperature range an oscillation frequency of about 1 MHz is also reported for an 11-stage ring oscillator.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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