Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures
Author:
Affiliation:
1. V. Lashkaryov Institute of Semiconductor
2. National Academy of Sciences of Ukraine
3. Taras Shevchenko Kyiv National University
4. Montanuniversitaet Leoben
Abstract
Publisher
Trans Tech Publications, Ltd.
Subject
General Engineering
Link
https://www.scientific.net/AMR.276.179.pdf
Reference17 articles.
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3. P. Normand, E. Kapetanakis, D. Tsoukalas, G. Kamoulakos, K. Beltos, J. Van Den Berg, S. Zhang: Mat. Sci. Eng C Vol. 15 (2001), p.145.
4. M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, E. Gauter: Solid-State Electron. Vol. 50 (2006), p.1310.
5. J.P. Conde, V. Chu, D.S. Shen, and S. Wagner: J. Appl. Phys. Vol. 75 (1994), p.1638.
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