Affiliation:
1. V. Lashkaryov Institute of Semiconductor
2. Taras Shevchenko Kyiv National University
3. National Academy of Sciences of Ukraine
Abstract
Low-frequency noise of the structures with Ge-nanoclusters of rather high surface density grown on the oxidized silicon surface is investigated for the first time. It was revealed that the 1/f γ noise, where γ is close to unity, is the typical noise component. Nevertheless, the 1/f γ noise sources were found to be distributed nonuniformly upon the oxidized silicon structure with Ge-nanoclusters. The noise features revealed were analyzed in the framework of widely used noise models. However, the models used appeared to be unsuitable to explain the noise behavior of the structures studied. The physical processes that should be allowed for to develop the appropriate noise model are discussed.
Publisher
Trans Tech Publications, Ltd.
Cited by
3 articles.
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