MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference5 articles.
1. Fast and long retention-time nano-crystal memory
2. Formation of 2-D Arrays of Silicon Nanocrystals in Thin SiO[sub 2] Films by Very-Low Energy Si[sup +] Ion Implantation
3. Electronic states at SiSiO2 interface introduced by implantation of Si in thermal SiO2
4. Single charge and confinement effects in nano‐crystal memories
5. Erase/write cycle tests of n-MOSFETs with Si-implanted gate-SiO/sub 2/
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