Affiliation:
1. Kansai Electric Power Co., Inc.
Abstract
To achieve large current capability in spite of present small SiC devices that are limited by various
crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC
GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM
SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application
of the SiC inverter aimed to a load leveling system was demonstrated.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
4 articles.
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