Developments of SiC devices and SiC inverters aimed at electric power applications-Reference-Cited by-同舟云学术

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Developments of SiC devices and SiC inverters aimed at electric power applications

Published:2019-07-24 Issue: Volume: Page:
ISSN:0424-7760
Container-title:Electrical Engineering in Japan
language:en
Short-container-title:Electr Eng Jpn

Author:

Sugawara Yoshitaka¹

Affiliation:

1. SiC Power Electronics Network (Spen) Mikanohara‐cho Hitachi Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/eej.23213

Reference21 articles.

1. Progress of power semiconductor devices (recent development of sic power device);Sugawara Y;Journal IEEJ,1998

2. Performance and application impact of wide‐gap semiconductors (SiC);Sugawara Y;IEICE Trans,1998

3. SiC power devices for large electric power conversion;Sugawara Y;Oyo Buturi,2001

4. A 4.5kV 6H silicon carbide rectifier;Kordina O;Appl Phys Lett,1995

5. Efficient Power Schottky Rectifiers of 4H‐SiC;Itoh A;Proceedings of International Symposium on Power Semiconductor Devices and IC's,1995

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1. Research on the Terminal Safety Performance Test of Electric Power Informatization Service Application System;Lecture Notes in Electrical Engineering;2024

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