An Overview of ms Annealing for Deep Sub-Micron Activation

Author:

Gelpey Jeffrey C.1,McCoy Steve1,Camm Dave1,Lerch Wilfried2

Affiliation:

1. Mattson Technology Canada

2. Mattson Thermal Products GmbH

Abstract

Millisecond annealing (MSA) has been developed over the last several years as a viable approach to achieve the high electrical activation, limited diffusion and high abruptness needed for junctions in the sub-65nm regime. This paper will provide an overview of the technology including the motivation, technology and some process results. Both main approaches for MSA, sub-melt laser and flash lamp annealing will be discussed as well as the potential challenges to bring these technologies into mainstream manufacturing.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Doping by flash lamp annealing;Materials Science in Semiconductor Processing;2017-05

2. A review of thermal processing in the subsecond range: semiconductors and beyond;Semiconductor Science and Technology;2016-09-01

3. Millisecond Annealing for Semiconductor Device Applications;Subsecond Annealing of Advanced Materials;2014

4. Millisecond flash lamp annealing for LaLuO3 and LaScO3 high-k dielectrics;Microelectronic Engineering;2013-09

5. Challenges of 22 nm and beyond CMOS technology;Science in China Series F: Information Sciences;2009-09

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