Influence of DC Current on Movement of Dislocations in P-Silicon Single Crystals in Field of Internal Stresses-Reference-Cited by-同舟云学术

Influence of DC Current on Movement of Dislocations in P-Silicon Single Crystals in Field of Internal Stresses

Published:2021-04 Issue: Volume:316 Page:975-980
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Solovyev Alexander A.¹,Rybin Vladislav V.¹,Kulagin Artem V.¹

Affiliation:

1. Ulyanovsk State University

Abstract

The behavior of linear defects in p-type silicon (111) carrying a direct current of density 0−15×105 A/m2 in the [110] direction are studied in the temperature range T=850–1000 K during isothermal annealing. The regularities of change in the linear density and maximum path of dislocations in slip lines are revealed. A model of linear defects displacement in silicon single crystals in the field of internal stresses under an electric current is proposed. Matching theory with experimental data has made it possible to reveal the dependence of this distribution on the internal stresses relaxation time.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.316.975.pdf

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