Effect of an electric field on the dislocation structure of silicon upon indentation in water-Reference-Cited by-同舟云学术

Effect of an electric field on the dislocation structure of silicon upon indentation in water

Published:2009-01 Issue:1 Volume:51 Page:50-54
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Orlov A. M.,Solov’ev A. A.,Yavtushenko I. O.,Skvortsov A. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783409010053.pdf

Reference12 articles.

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2. T. Suzuki, H. Yoshinaga, and S. Takeuchi, Dislocation Dynamics and Plasticity (Syokabo, Tokyo, 1986; Mir, Moscow, 1989).

3. I. V. Ostrovskiĭ, L. P. Steblenko, and A. B. Nadtochiĭ, Fiz. Tverd. Tela (St. Petersburg) 42(3), 478 (2000) [Phys. Solid State 42 (3), 488 (2000)].

4. I. Yonenaga, M. Werner, M. Bartsch, U. Messerschmidt, and E. R. Weber, Phys. Status Solidi A 171, 35 (1999).

5. V. A. Makara, L. P. Steblenko, N. Ya. Gorid’ko, V. M. Kravchenko, and A. N. Kolomiets, Fiz. Tverd. Tela (St. Petersburg) 43(3), 462 (2001) [Phys. Solid State 43 (3), 480 (2001)].

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