Defect Control in Nitrogen Doped Czochralski Silicon Crystals
Author:
Affiliation:
1. Wacker NSCE Corporation
2. Tohoku University
3. Nagoya Research Center & Development Center
4. Shizuoka University
5. Nippon Steel Corporation
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Link
https://www.scientific.net/SSP.69-70.161.pdf
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy;Applied Physics Express;2019-02-01
2. Appearance of Ferromagnetic Property for Si Nanopolycrystalline Body and Vanishing of Electrical Resistances at Local High Frequencies;Journal of Nanomaterials;2018-11-25
3. A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon;Journal of Applied Physics;2010-08
4. Study of Au Diffusion in Nitrogen-Doped FZ Si;Solid State Phenomena;2005-12
5. Modeling and experimental verification of the 300mm Ar anneal process;Materials Science and Engineering: B;2005-12
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