Comparative Study of Characteristics of Lateral MOSFETs Fabricated on 4H-SiC (11-20) and (1-100) Faces

Abstract

We have fabricated the lateral MOSFETs on (11-20) and (1-100) faces and have compared the properties between these faces with various gate oxide processes. It has been demonstrated that (11-20) and (1-100) faces show comparable electrical properties with nitridation treatment on the gate oxide. Our result indicates that both faces exhibit the similar trend of the mobility vs. Dit. Furthermore, it has been shown that NO POA is beneficial to both faces in achieving high channel mobility and suppressed Vt instability.