Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates-Reference-Cited by-同舟云学术

Extraordinary Characteristics of 4H-SiC Trench MOSFETs on Large Off-Axis Substrates

Published:2011-03 Issue: Volume:679-680 Page:666-669
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ueoka Yoshihiro¹,Yano Hiroshi¹,Okamoto Dai²,Hatayama Tomoaki¹,Fuyuki Takashi¹

Affiliation:

1. Nara Institute of Science and Technology

2. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

We investigated electrical properties of 4H-SiC trench metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on (000_,1) C-face substrates with various off-axis angles. Off-axis angles and directions are 4o, 8o, and 15o towards [__,1120] and 8o towards [1_,100] directions. Most trench MOSFETs showed good on-state performance. Peculiar characteristics that field-effect mobility was 103 cm2/Vs in spite of a relatively high acceptor concentration of 1 × 1017 cm−3 in the channel region were observed for trench MOSFET on 15o-off substrates. From crystallographic analysis, this face is (11_,20) with 15o off towards [000_,1] direction. We can expect that this face has quite good MOS interface properties.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.679-680.666.pdf

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