SiC UV Detectors under Heavy Ions Irradiation-Reference-Cited by-同舟云学术

SiC UV Detectors under Heavy Ions Irradiation

Published:2015-06 Issue: Volume:821-823 Page:867-870
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kalinina Evgenia¹,Lebedev Alexandr¹,Berenguier Baptiste²^ORCID,Ottaviani Laurent²,Skuratov Vladimir A.³

Affiliation:

1. Russian Academy of Sciences

2. Aix Marselle Universite

3. Joint Institute for Nuclear Research

Abstract

4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x109 cm-2. Comparative studies of the optical and electrical properties of initial and irradiated structures with Schottky barriers were carried out in temperature range 23-180°C. Swift heavy ion stimulated changes in photosensitivity and electrical characteristics of the initial and irradiated detectors are explained in terms of the fluctuation traps model with the subsequent thermal dissociation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.867.pdf

Reference5 articles.

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