Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors-Reference-Cited by-同舟云学术

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Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors

Published:2005-05-23 Issue:8 Volume:20 Page:710-715
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Blank T V,Goldberg Yu A,Kalinina E V,Konstantinov O V,Konstantinov A O,Hallén A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Temperature dependence of the quantum efficiency of 4H-SiC-based Schottky photodiodes

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