Temperature dependence of the quantum efficiency of 4H-SiC-based Schottky photodiodes-Reference-Cited by-同舟云学术

Temperature dependence of the quantum efficiency of 4H-SiC-based Schottky photodiodes

Published:2001-09 Issue:9 Volume:27 Page:776-778
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Blank T. V.,Gol’dberg Yu. A.,Kalinina E. V.,Konstantinov O. V.,Konstantinov A. O.,Hallen A.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1407356.pdf

Reference9 articles.

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3. S.-K. Lee, C.-M. Zetterling, and M. Ostling, J. Appl. Phys. 87(11), 8039 (2000).

4. R. G. Verenchikova, Yu. A. Vodakov, D. P. Litvin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 26(6), 1008 (1992) [Sov. Phys. Semicond. 26, 565 (1992)].

5. G. N. Violina, E. V. Kalinina, G. F. Kholuyanov, et al., in Proceedings of the 3rd International Symposium “Silicon Carbide and Related Materials,” ISSCRM-2000, Novgorod, 2000, p. 70.

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