Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Author:

Ohshima Takeshi1,Iwamoto Naoya1,Onoda Shinobu1,Makino Takahiro1,Nozaki Shinji2,Kojima Kazutoshi3

Affiliation:

1. QST

2. The University of Electro-Communications

3. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

Charge induced in 6H-SiC nMOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC) before and after gamma-ray irradiations. The peak amplitude of TIBIC signals decreases and the fall time increases with increasing number of incident ions. The decrease in the TIBIC peak eventually saturated. The TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to gate oxide. Small decrease in both the peak amplitude of TIBIC signal and collected charge was observed due to gamma-ray irradiation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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