Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts-Reference-Cited by-同舟云学术

Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Published:2010-04 Issue: Volume:645-648 Page:59-62
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Mercier Frédéric¹,Galben-Sandulache Irina G.²,Marinova Maya³,Zoulis Georgios⁴,Ouisse Thierry²,Polychroniadis Efstathios K.³,Chaussende Didier²^ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. UMR CNRS 5628, INP Grenoble-MINATEC

3. Aristotle University of Thessaloniki

4. Université Montpellier 2 and CNRS

Abstract

We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.59.pdf

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