Silicon carbide and SiC-AIN solid-solution p-n structures grown by liquid-phase epitaxy-Reference-Cited by-同舟云学术

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Silicon carbide and SiC-AIN solid-solution p-n structures grown by liquid-phase epitaxy

Published:1993-04 Issue:1-4 Volume:185 Page:440-452
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Dmitriev V.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. SiC bipolar devices

2. Applications of Diamond Films and Related Materials;Dmitriev,1991

3. Solubility of Carbon in Silicon and Germanium

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of a carbon evaporator cell for MBE growth;Vacuum;2020-11

2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

3. Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent;Journal of Crystal Growth;2014-04

4. Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts;Materials Science Forum;2010-04

5. Liquid Phase Epitaxy for Light Emitting Diodes;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

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