Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
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Published:2020-07
Issue:
Volume:1004
Page:5-13
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Tokuda Yuichiro1, Hoshino Norihiro2, Kuno Hironari1, Uehigashi Hideyuki1, Okamoto Takeshi1, Kanda Takahiro1, Ohya Nobuyuki1, Kamata Isaho2, Tsuchida Hidekazu2
Affiliation:
1. DENSO CORPORATION 2. Central Research Institute of Electric Power Industry (CRIEPI)
Abstract
The process conditions for fast growth of 4 in. 4H-polytype SiC (4H-SiC) single crystals were studied for high-temperature gas source method. Prior to experiments, crystal growth simulations were conducted to investigate the influence of vertical gas-flow velocity on the radial distribution of the growth rate. Crystal growth experiments were performed using the crucibles designed for 4 in. crystal growth following the simulation studies. By investigating growth rate as functions of the input partial pressure of source gases and temperatures of growing surfaces, expressions for the growth rate of 4-in. crystals were derived. We also clarified the optimal conditions for single-crystal growth. Finally, fast growth of 4 in. 4H-SiC crystals with uniform shape was demonstrated.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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