Abstract
The Cu/55vol.%diamond (Ti) composites were fabricated by hot forging of the cold-pressed powder preforms, consisted of elemental copper powders and Ti-coated diamond particles, at 800 °C (800C-Cu/55Dia composite) and 1050 °C (1050C-Cu55Dia composite), respectively. Well bonded interface was achieved between the diamond and the copper matrix for the 800C-Cu/55Dia composite, and the coverage of diamond by interface was about 96%, attributed to homogeneously distributed nanospherical TiC interface formed on the diamond surface. However, obvious coarse TiC particle size and spallation of the formed interface were observed in the 1050C-Cu55Dia composite, implying that the composite had a relatively low bonding strength. The formed chemical bonding, good wettability and strong mechanical interlocking between the diamond and the copper matrix enable the 800C-Cu/55Dia composite having a high tensile strength of 145 MPa and a strain at fracture of 0.35%, which are about 260% and 170% higher than those of the 1050C-Cu55Dia composite, suggesting that the 800C-Cu/55Dia composite has the potential to have a high thermal conductivity and use as high-performance heat sink materials.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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