Effect of Al-Doped on the Electrical Properties of Nb₂O₅ Film Prepared by DC. Plasma Sputtering Technique

Abstract

Thin films of Niobium oxide (Nb2O5) co-doped with (0.5, 1, and 1.5) %wt. percentages of Aluminum (Al) were prepared on glass substrates by DC. Sputtering plasma technique. The effects of Al concentration on structural, surface morphology, optical and electrical properties of transparent were investigated. Polycrystalline structures without any second phases were observed with preferential orientations along the (001), (100), (101), (002), and (111) planes. The crystalline size as determined from the (001) peaks lay in the range (20-50) two theta and all films of Nb2O5: Al films have pseudohexagonal phase. It was observed that Al doping reduced the crystal size but at the samples 0.5%Al the crystalline size increased slightly. Also, it's observing from SEM images an increase in particle size after Al-doped. The minimum resistivity was found to be 4.79 x104 (Ω.cm) for the Nb2O5 doped with 1.5%Al concentration and maximum resistivity was found to be (4.86 x104 (Ω.cm) for the pure Nb2O5. The doping to the optimum level of 1.5% Al concentration increases the electrical conductivity of Nb2O5. The mobility decreased but the sample 1.5%Al concentration increases and the carrier concentration increased with increasing the doping with Al but the sample 1.5%Al concentration decreases. The analysis of Hall coefficient showed the Nb2O5: Al films were n-type.