In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications-Reference-Cited by-同舟云学术

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

Published:2020-03-30 Issue:14 Volume:12 Page:16639-16647
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kozen Alexander C.¹,Robinson Zachary R.²,Glaser Evan R.³,Twigg Mark³,Larrabee Thomas J.⁴,Cho Hans³,Prokes S. M.³,Ruppalt Laura B.³^ORCID

Affiliation:

1. American Society for Engineering Education, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States

2. Department of Physics, SUNY Brockport, Brockport, New York 14420, United States

3. Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States

4. Jacobs Engineering, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States

Funder

Office of Naval Research

American Society for Engineering Education

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c01279

Reference52 articles.

1. Finding a roadmap to achieve large neuromorphic hardware systems

2. Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

3. Development and Applications of Biomimetic Neuronal Networks Toward BrainMorphic Artificial Intelligence

4. Nonvolatile Memory Materials for Neuromorphic Intelligent Machines

5. Integration of nanoscale memristor synapses in neuromorphic computing architectures

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices;Scientific Reports;2023-10-09

2. Area-Selective Deposition by Cyclic Adsorption and Removal of 1-Nitropropane;The Journal of Physical Chemistry A;2023-09-08

3. Memristive effect in niobium oxide thin films obtained by the pulsed laser deposition;Thin Solid Films;2023-09

4. EELS Characterization of Niobium Oxide Memristor Devices;Microscopy and Microanalysis;2023-07-22

5. Surface reaction mechanism of atomic layer deposition of niobium oxide: In situ characterization and first-principle study;Applied Surface Science;2023-04