Surface reaction mechanism of atomic layer deposition of niobium oxide: In situ characterization and first-principle study

Author:

Khumaini Khabib,Roh Hyeonsu,Han Hyunmin,Kim Hye-Lee,Kim Hyo-Suk,Seok Jang-Hyeon,Park Jung Woo,Lee Won-Jun

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference63 articles.

1. Rapid thermal processed thin films of niobium pentoxide (Nb2O5) deposited by reactive magnetron sputtering;Pignolet;Thin Solid Films,1995

2. Y. Matsui, M. Hiratani, Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films, US6955959B2, 2005.

3. Dielectric breakdown of anodic oxide films on valve metals;Wood;Corros. Sci.,1967

4. Dielectric properties of amorphous Nb2O5 thin films;Fuschillo;Thin Solid Films.,1975

5. Combining Ta2O5 and Nb2O5 in bilayered structures and solid solutions for use in MIM capacitors;Matsui;J. Electrochem. Soc.,2005

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