Affiliation:
1. United Silicon Carbide
Abstract
This paper presents results on developing high temperature capable SiC JFET based IC technology that can operate at temperatures up to 500 °C. All JFET devices are fully planar, formed by ion implantation, and the device design allows the use of semi-insulating or conductive SiC substrates. Basic analog and logic ICs were built in order to demonstrate the technology high temperature capability. All circuits used enhancement mode n-channel JFETs as active transistors, and depletion mode transistors as active loads. The logic circuits built included NOT, NAND, and NOR gates. The analog circuits built included a simple one-stage operational amplifier. JFETs and ICs were packaged in ceramic packages and tested at temperatures up to 500 °C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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