Abstract
This paper presents single walled carbon nanotube (SWCNT) interconnects with air as dielectric medium. We treat CNT interconnects as a discrete (fractal) media for the first time where continuum based differential equations fail to capture the physics at nanoscale and hence, we use discrete partial differential equations in this work. We have analyzed the effect of air gaps (AG) on performance factors like temperature dependent resistance R(T) of CNTs and hence the R(T)C delay of the interconnects. We have first calculated the temperature coefficient of resistance (TCR) of CNTs and analyzed the trend of changing resistance at different ambient temperatures. The R(T)C delay shows that CNT/AG interconnects can operate satisfactorily up to 500K. We then compare the R(T)C delay with ITRS predictions from 17nm to 8nm technology nodes. We have also calculated the chip area used by CNT/air-gap interconnects and found that they take up to 83% lesser area than the conventional Cu/low-k interconnects.
Publisher
Trans Tech Publications, Ltd.
Cited by
10 articles.
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