Characterization of La<sub>x</sub>Hf<sub>y</sub>O Gate Dielectrics in 4H-SiC MOS Capacitor-Reference-Cited by-同舟云学术

Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor

Published:2014-02 Issue: Volume:778-780 Page:549-552
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Xia Jing Hua¹,Martin David M.¹,Suvanam Sethu Saveda¹,Zetterling Carl Mikael¹,Östling Mikael¹

Affiliation:

1. KTH Royal Institute of Technology

Abstract

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.549.pdf

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