P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons-Reference-Cited by-同舟云学术

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P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons

Published:2013-01 Issue: Volume:740-742 Page:353-356
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Lebedev Alexander A.¹,Kozlovski Vitalii V.²,Belov Sergey V.¹,Bogdanova Elena V.¹,Oganesyan Gagik A.¹

Affiliation:

1. Russian Academy of Sciences

2. St. Petersburg State Polytechnic University

Abstract

Carrier removal rate (Vd) in p-6H-SiC in its irradiation with 8 MeV protons has been studied. p-6H-SiC samples were produced by sublimation in a vacuum. Vd was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that full compensation of samples with initial value of Na-Nd 1.5 x1018 cm-3 occurs at an irradiation dose of ~1.1 1016 cm-2. In this case, the carrier removal rate was ~130 cm-1

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.353.pdf

Reference16 articles.

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4. R. Smith, Semiconductors, Cambridge Univ. Press, Cambridge, (1982).

5. M.E. Levinshtein, S.L. Rumyantsev, and M.S. Shur, Editors: Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe", Wiley, New York, (2001).

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