New results in sublimation growth of the SiC epilayers-Reference-Cited by-同舟云学术

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New results in sublimation growth of the SiC epilayers

Published:1999-07 Issue: Volume:61-62 Page:165-167
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Savkina N.S.,Lebedev A.A.,Davydov D.V.,Strel’chuk A.M.,Tregubova A.S.,Yagovkina M.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. A.O. Konstantinov, E.N. Mokhov, Pis’ma Zh. Tekn. Fiz. 7, 247 (1981) [Sov. Tech. Phys. Lett. 7. 106 (1981)].

2. Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

3. Measurement of electrophysical properties of silicon carbide epitaxial films

4. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sublimation Growth of Hexagonal and Cubic SiC Layers;Reference Module in Materials Science and Materials Engineering;2016

2. Irradiation and annealing of p-type silicon carbide;AIP Conference Proceedings;2014

3. P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons;Materials Science Forum;2013-01

4. Annealing of radiation-compensated silicon carbide;Technical Physics Letters;2012-10

5. Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons;Semiconductors;2011-09

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