Highly doped p-type 3C–SiC on 6H–SiC substrates-Reference-Cited by-同舟云学术

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Highly doped p-type 3C–SiC on 6H–SiC substrates

Published:2008-05-07 Issue:7 Volume:23 Page:075004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lebedev A A,Abramov P L,Bogdanova E V,Lebedev S P,Nel'son D K,Oganesyan G A,Tregubova A S,Yakimova R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Formation of two-dimensional electron gases in polytypic SiC heterostructures

3. Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method;Semiconductors;2023-02

2. Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides;IEEE Journal of the Electron Devices Society;2022

3. First-principles predictions of Hall and drift mobilities in semiconductors;Physical Review Research;2021-10-08

4. Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100);Materials;2021-08-06

5. Group velocity matters for accurate prediction of phonon-limited carrier mobility*;Chinese Physics B;2021-08-01

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