Large Area 1200 V SiC BJTs with β>100 and ρ<sub>ON</sub><3 mΩcm<sup>2</sup>-Reference-Cited by-同舟云学术

Large Area 1200 V SiC BJTs with β>100 and ρ_ON<3 mΩcm²

Published:2012-05 Issue: Volume:717-720 Page:1123-1126
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Domeij Martin¹,Konstantinov Andrei¹,Lindgren Anders¹,Zaring Carina¹,Gumaelius Krister¹,Reimark Mats¹

Affiliation:

1. Fairchild Semiconductor

Abstract

Large (4.3 mm2) area SiC BJTs were demonstrated with a current gain of 117 and a specific on-resistance of 2.8 mΩcm2. The open-base and open-emitter breakdown voltages are stable and with margin sufficient for 1200 V blocking. Fast and tail-current free switching behaviour was shown with rise- and fall-times in the range of 10-30 ns and the SiC BJTs were shown to be rugged in short-circuit and unclamped inductive switching.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.717-720.1123.pdf

Reference5 articles.

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