1. 1991 IEE Colloquium on New Developments in Power Semiconductor Devices D.A. Grant Power semiconductors‐innovation and improvement continue to challenge the designer 1/1 1/6
2. 1800 V NPN bipolar junction transistors in 4H‐SiC;Sei‐Hyung R.;IEEE Electron Device Lett.,2001
3. Large area 1200 V SiC BJTs with β > 100 and ρON < 3 mΩcm2;Martin Domeij A.K.;Mater. Sci. Forum,2012
4. 2008 34th Annual Conf. of IEEE Industrial Electronics IECON A. Agarwal Z. Qingchun A. Burk R. Callanan S. Mazumder Prospects of bipolar power devices in silicon carbide 2879 2884
5. Theoretical prediction of the performance of Si and SiC bipolar transistors operating at high temperatures;Liou J.J.;IEE Proc. G (Circuits, Devices Syst.),1993