Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

Abstract

In this study, we struck a balance between specular surface morphology and polytype homogeneity on an epitaxial layer grown on 4H-SiC Si-face substrate with off angle less than 1degree by controlling the C/Si ratio with the SiH4 flow rate. Schottky barrier diodes fabricated on a grown epitaxial layer exhibited a blocking of voltage over 1000 V and an n value of less than 1.1 with a high yield of more than 80%. A substrate with a low off angle was found to have an advantage as regareds the stress that generates the interfacial dislocations at the epitaxial layer/substrate interface during the epitaxial growth process.